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Ordering number : ENN8198
VEC2901
VEC2901
Features
* *
TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET
Switching, Flash Applications
Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting. Ultrasmall package permitting applied sets to be made small and slim.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature [FET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% 30 10 150 600 0.25 150 --55 to +150 V V mA mA W C C VCBO VCEO VEBO IC ICP PC Tj Tstg Mounted on a ceramic board (900mm2!0.8mm) 1unit 100 50 6 5 8 1.1 150 --55 to +150 V V V A A W C C Symbol Conditions Ratings Unit
Electrical Characteristics at Ta=25C
Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage ICBO IEBO hFE fT Cob VCE(sat)1 VCE(sat)2 VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=500mA VCE=10V, IC=500mA VCB=10V, f=1MHz IC=1.6A, IB=53mA IC=2A, IB=40mA 250 330 26 55 75 110 150 100 100 400 MHz pF mV mV nA nA Symbol Conditions Ratings min typ max Unit
Marking : AA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12505EA TS IM TB-00001130 No.8198-1/6
VEC2901
Continued from preceding page.
Parameter Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time [FET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=100A VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA VDS=10V, VGS=10V, ID=150mA IS=150mA, VGS=0 0.4 0.15 0.22 2.9 3.7 6.4 7.0 5.9 2.3 19 65 155 120 1.58 0.26 0.31 0.87 1.2 3.7 5.2 12.8 30 10 V A A V S pF pF pF ns ns ns ns nC nC nC V Symbol VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf IC=2A, IB=40mA IC=10A, IE=0 IC=1mA, RBE= IE=10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Conditions Ratings min 100 50 6 30 360 22 typ 0.9 max 1.2 Unit V V V V ns ns ns
10
1.3
Package Dimensions unit : mm 2240
0.25
0.3 8 7 65 0.15
Electrical Connection
8
7
6
5
0.25
1
2 2.9
3 0.65
4
1
2
3
4
1 : Base 2 : Emitter 3 : Gate 4 : Drain 5 : Source 6 : Collector 7 : Collector 8 : Collector
Top view
2.8
2.3
0.75
1 : Base 2 : Emitter 3 : Gate 4 : Drain 5 : Source 6 : Collector 7 : Collector 8 : Collector SANYO : VEC8
0.07
No.8198-2/6
VEC2901
Switching Time Test Circuit
VIN 4V 0V VIN ID=80mA RL=187.5 VDD=15V PW=20s D.C.1% INPUT RB VR 50 + 100F P.G 50 + 470F IB1 IB2 OUTPUT
Switching TimeII Test Circuit
D
PW=10s D.C.1%
VOUT
RL
G
S
VBE= --5V
VCC=25V
IC= --20IB1= 20IB2=2.5A
5.0
IC -- VCE
50m
[TR]
6
IC -- VBE
[TR] VCE=2V
4.5
4
0mA
30mA
A
Collector Current, IC -- A
60m
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0
15mA
Collector Current, IC -- A
4.0
20mA
5
A
4
10mA 8mA 6mA
3
2mA
IB=0
0.2 0.4 0.6 0.8 1.0 IT08135
1
0 0
0.2
0.4
0.6
--25C
0.8
25C
4mA
2
Ta=75 C
1.0 IT08136
Collector-to-Emitter Voltage, VCE -- V
7
Base-to-Emitter Voltage, VBE -- V
3
hFE -- IC
[TR] VCE=2V
2
VCE(sat) -- IC
[TR] IC / IB=20
5
Ta=75C
25C
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
DC Current Gain, hFE
0.1 7 5 3 2
3
--25C
2
= Ta
C 75
--2
C 5
0.01 7
25
C
100 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7
5 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7
Collector Current, IC -- A
3 2
IT08137
VCE(sat) -- IC
Collector Current, IC -- A
2
IT08138
[TR] IC / IB=50
VBE(sat) -- IC
[TR] IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
0.1 7 5
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
1.0
Ta= --25C
7
3 2
= Ta
25
C 75
--
C 25
25C
5
75C
C
0.01 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7
3 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7
Collector Current, IC -- A
IT08139
Collector Current, IC -- A
IT08140
No.8198-3/6
VEC2901
2
Cob -- VCB
[TR] f=1MHz Gain-Bandwidth Product, f T -- MHz
1000 7 5 3 2
f T -- IC
[TR] VCE=2V
Output Capacitance, Cob -- pF
100 7 5
100 7 5 3 2
3
2
10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7
10 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7
Collector-to-Base Voltage, VCB -- V
2 10 7 5
IT08141
ASO
Collector Current, IC -- A
1.2 1.1
IT08142
[TR] <10s
PC -- Ta
[TR]
ICP=8A
Collector Current, IC -- A
3 2 1.0 7 5 3 2 0.1 7 5 3 2
IC=5A
10
s
Collector Dissipation, PC -- W
1m
10
DC op era
1.0
M
ou
10
s s 0 0 50
nt
ms
ed
0m
0.8
on
s
ac
er
am
ic
tio
0.6
bo
n
ar
d
(9
00
0.4
m
m2 !
0.
8m
0.01 0.1
Ta=25C Single Pulse Mounted on a ceramic board (900mm2!0.8mm)
2 3 5 7 1.0 2 3 5 7 10 2 3
0.2
m
)
0 7 100 IT08143 5 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V
0.16 0.14 0.12 0.10 0.08
Ambient Temperature, Ta -- C
0.30
IT08144
ID -- VDS
5V
V
[FET]
ID -- VGS
--25 C
VDS=10V
[FET]
Ta=
Drain Current, ID -- A
Drain Current, ID -- A
V
6.0
0.15
VGS=1.5V
0.06 0.04 0.02 0 0 0.2 0.4 0.6 0.8 1.0 IT00029
0.10
0.05
0 0 0.5
25 C Ta =7 5 --2 5C C
75
2.5
C
0.20
25
3.0 IT00030
1.0
1.5
2.0
Drain-to-Source Voltage, VDS -- V
10 9
Gate-to-Source Voltage, VGS -- V
10
RDS(on) -- VGS
[FET] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) --
RDS(on) -- ID
VGS=4V
7
Static Drain-to-Source On-State Resistance, RDS(on) --
8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10
5
80mA ID=40mA
Ta=75C
3
25C --25C
2
1.0 0.01
2
3
5
7
0.1
2
C
[FET]
3 5 IT00032
4.0V
3.0
2.
3.5V
2.0
V
0.25
Gate-to-Source Voltage, VGS -- V
IT00031
Drain Current, ID -- A
No.8198-4/6
VEC2901
10
RDS(on) -- ID
[FET] VGS=2.5V
100 7
RDS(on) -- ID
[FET] VGS=1.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
7
Static Drain-to-Source On-State Resistance, RDS(on) --
5 3 2
5
Ta=75C 25C
3
--25C
10 7 5 3 2
Ta=75C --25C 25C
2
1.0 0.01
2
3
5
7
0.1
2
3
5 IT00033
1.0 0.001
2
3
5
7
0.01
2
3
Drain Current, ID -- A
7
Drain Current, ID -- A
1.0
RDS(on) -- Ta
[FET]
yfs -- ID
IT00034
Forward Transfer Admittance, yfs -- S
7 5 3 2
[FET] VDS=10V
Static Drain-to-Source On-State Resistance, RDS(on) --
6
5
4
3
V 40m =4.0 I D= , VGS A 80m I D=
A,
=2. V GS
5V
-Ta=
25C
75C
0.1 7 5 3 2
25C
2
1 0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
5 3
0.01 0.01
2
3
5
7
0.1
2
3
5 IT00036
IT00035
Drain Current, ID -- A
1000 7
IF -- VSD
[FET] VGS=0
SW Time -- ID
[FET] VDD=15V VGS=4V
Forward Current, IF -- A
2
Switching Time, SW Time -- ns
5 3 2
Ta=
75
0.1 7 5 3 2
td(off) tf
C
25
C
100 7 5 3 2
--25 C
tr
td(on)
0.01 0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2 IT00037
10 0.01
2
3
5
7
0.1
2 IT00038
Diode Forward Voltage, VSD -- V
100 7 5
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
10 9
[FET] f=1MHz
VGS -- Qg
[FET]
Gate-to-Source Voltage, VGS -- V
VDS=10V ID=150mA
8 7 6 5 4 3 2 1
Ciss, Coss, Crss -- pF
3 2
10 7 5 3 2
Ciss
Coss
Crss
1.0 0 2 4 6 8 10 12 14 16 18 20
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain-to-Source Voltage, VDS -- V
IT00039
Total Gate Charge, Qg -- nC
IT00040
No.8198-5/6
VEC2901
0.30
PD -- Ta
[FET]
Allowable Power Dissipation, PD -- W
0.25
0.20
0.15
0.10
0.05
0 0 20 40 60 80 100 120 140 160
Amibient Temperature, Ta -- C
IT01962
Note on usage : Since the VEC2901 includes MOSFET, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice.
PS No.8198-6/6

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